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Physics. Ingenuity. A world beyond the familiar.

INSIDE THE SYSTEM

Gate Transistor Topologies

FinFET fin aspect ratios, gate-all-around nanosheet stacking, channel carrier mobility, and drain-induced barrier lowering.

THE READING ROOM

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A NOTE FROM THE ARCHIVE

Complex machines deserve
a closer look.

We follow the forces, explain the compromises and distinguish evidence from assumption.

Our approach